aptgt300a120g aptgt300a120g ? rev 2 august, 2009 www.microsemi.com 1-5 absolute maximum ratings these devices are sens itive to electrostatic discharge. prope r handling procedures should be follow ed. see application note apt0502 on www.microsemi.com q2 0/vbus q1 vbus out g1 g2 e2 e1 out vbus e1 g1 0/vbus g2 e2 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 420 i c continuous collector current t c = 80c 300 i cm pulsed collector current t c = 25c 600 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1380 w rbsoa reverse bias safe operating area t j = 125c 600a @ 1100v v ces = 1200v i c = 300a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? fast trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant phase leg fast trench + field stop igbt power module
aptgt300a120g aptgt300a120g ? rev 2 august, 2009 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 500 a t j = 25c 1.4 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge =15v i c = 300a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 4 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 21 c oes output capacitance 1.2 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.9 nf t d(on) turn-on delay time 260 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 300a r g = 1.8 70 ns t d(on) turn-on delay time 290 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 300a r g = 1.8 90 ns e on turn on energy t j = 125c 30 e off turn off energy v ge = 15v v bus = 600v i c = 300a r g = 1.8 t j = 125c 30 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 500 i rm maximum reverse leakage current v r =1200v t j = 125c 700 a i f dc forward current tc = 80c 300 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 300a v ge = 0v t j = 125c 1.6 v t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 27 q rr reverse recovery charge t j = 125c 54 c t j = 25c 15 e r reverse recovery energy i f = 300a v r = 600v di/dt =3000a/s t j = 125c 27 mj
aptgt300a120g aptgt300a120g ? rev 2 august, 2009 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.09 r thjc junction to case thermal resistance diode 0.17 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructi ons for sp6 power modules on www.microsemi.com
aptgt300a120g aptgt300a120g ? rev 2 august, 2009 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 100 200 300 400 500 600 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 100 200 300 400 500 600 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 100 200 300 400 500 600 5 6 7 8 9 10 11 12 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 12.5 25 37.5 50 62.5 75 0 100 200 300 400 500 600 i c (a) e (mj) v ce = 600v v ge = 15v r g = 1.8 ? t j = 125c eon eoff er 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 300a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 600 700 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =1.8 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
aptgt300a120g aptgt300a120g ? rev 2 august, 2009 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c t j =125c 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 10 20 30 40 50 60 0 50 100 150 200 250 300 350 400 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =1.8 ? t j =125c tc=75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.04 0.08 0.12 0.16 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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